Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH 100V 101A ISOPLUS220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ 160W (Tc) N-Channel 100V 101A (Tc) 6.3 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 10V ±30V
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IXYS MOSFET N-CH 250V 50A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 180W (Tc) N-Channel 250V 50A (Tc) 27 mOhm @ 55A, 10V 4.5V @ 1mA 157nC @ 10V 9400pF @ 25V 10V ±20V