- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
600
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 3.2A DPAK | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-1 | 38W (Tc) | N-Channel | - | 500V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 3.9V @ 135µA | 15nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,591
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,532
In-stock
|
Rohm Semiconductor | MOSFET N-CH 250V 4A CPT3 | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 4A (Tc) | 1300 mOhm @ 2A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
|
VIEW |
643
In-stock
|
Rohm Semiconductor | MOSFET N-CH 250V 4A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 4A (Tc) | 1300 mOhm @ 2A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,609
In-stock
|
Rohm Semiconductor | MOSFET N-CH 250V 4A CPT3 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 4A (Tc) | 1300 mOhm @ 2A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,493
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |