Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF2807SPBF
RFQ
VIEW
RFQ
2,598
In-stock
Infineon Technologies MOSFET N-CH 75V 82A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 75V 82A (Tc) 13 mOhm @ 43A, 10V 4V @ 250µA 160nC @ 10V 3820pF @ 25V 10V ±20V
IRF2807STRRPBF
RFQ
VIEW
RFQ
2,899
In-stock
Infineon Technologies MOSFET N-CH 75V 82A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 75V 82A (Tc) 13 mOhm @ 43A, 10V 4V @ 250µA 160nC @ 10V 3820pF @ 25V 10V ±20V
STW52NK25Z
RFQ
VIEW
RFQ
1,568
In-stock
STMicroelectronics MOSFET N-CH 250V 52A TO-247 SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 250V 52A (Tc) 45 mOhm @ 26A, 10V 4.5V @ 150µA 160nC @ 10V 4850pF @ 25V 10V ±30V