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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,562
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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1,521
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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2,356
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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634
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 170W (Tc) | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | |||
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3,005
In-stock
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Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
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3,976
In-stock
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Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
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VIEW |
3,861
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 170W (Tc) | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | |||
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1,785
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
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VIEW |
1,406
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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VIEW |
1,703
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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VIEW |
2,562
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V |