- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,989
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 4.5A TO251 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 50W (Tc) | N-Channel | 600V | 4.5A (Tc) | 900 mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | 480pF @ 100V | 10V | ±30V | |||
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VIEW |
3,500
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 3.3A TO251 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 38W (Tc) | N-Channel | 600V | 3.3A (Tc) | 1.4 Ohm @ 2A, 10V | 4V @ 250µA | 7.7nC @ 10V | 370pF @ 100V | 10V | ±30V | |||
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VIEW |
2,075
In-stock
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ON Semiconductor | MOSFET N-CH 520V 1.3A IPAK | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 2.5W (Ta), 26W (Tc) | N-Channel | 520V | 1.3A (Tc) | 5.3 Ohm @ 650mA, 10V | 4V @ 250µA | 11nC @ 10V | 340pF @ 25V | 10V | ±30V | |||
