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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,116
In-stock
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 18A (Ta) | 4.8 mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | 2315pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,654
In-stock
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Rohm Semiconductor | MOSFET N-CH 10V DRIVE LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | - | 600V | 18A (Ta) | 270 mOhm @ 9A, 10V | 4.5V @ 1mA | 55nC @ 10V | 2050pF @ 25V | 10V | ±30V | |||
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VIEW |
3,156
In-stock
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Infineon Technologies | MOSFET N-CH 40V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 18A (Ta) | 5 mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | 4.5V, 10V | ±20V | |||
