Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI120N04S302AKSA1
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Infineon Technologies MOSFET N-CH 40V 120A TO262-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 40V 120A (Tc) 2.3 mOhm @ 80A, 10V 4V @ 230µA 210nC @ 10V 14300pF @ 25V 10V ±20V
IPB180N04S302ATMA1
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3,155
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Infineon Technologies MOSFET N-CH 40V 180A TO263-7 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 300W (Tc) N-Channel - 40V 180A (Tc) 1.5 mOhm @ 80A, 10V 4V @ 230µA 210nC @ 10V 14300pF @ 25V 10V ±20V
IPP120N04S302AKSA1
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2,243
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Infineon Technologies MOSFET N-CH 40V 120A TO220-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 40V 120A (Tc) 2.3 mOhm @ 80A, 10V 4V @ 230µA 210nC @ 10V 14300pF @ 25V 10V ±20V