Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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R5013ANJTL
RFQ
VIEW
RFQ
3,011
In-stock
Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel 500V 13A (Ta) 380 mOhm @ 6.5A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
R6012ANJTL
RFQ
VIEW
RFQ
1,869
In-stock
Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel 600V 12A (Ta) 420 mOhm @ 6A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
R6012ANX
RFQ
VIEW
RFQ
1,022
In-stock
Rohm Semiconductor MOSFET N-CH 600V 12A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel 600V 12A (Ta) 420 mOhm @ 6A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
IRFR1205PBF
RFQ
VIEW
RFQ
2,866
In-stock
Infineon Technologies MOSFET N-CH 55V 44A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 107W (Tc) N-Channel 55V 44A (Tc) 27 mOhm @ 26A, 10V 4V @ 250µA 65nC @ 10V 1300pF @ 25V 10V ±20V
R5013ANXFU6
RFQ
VIEW
RFQ
1,823
In-stock
Rohm Semiconductor MOSFET N-CH 500V 13A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel 500V 13A (Ta) 380 mOhm @ 6.5A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V