Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF1010NSTRRPBF
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3,023
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Infineon Technologies MOSFET N-CH 55V 85A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
IRF1010NSPBF
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2,029
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Infineon Technologies MOSFET N-CH 55V 85A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
IRFS3306PBF
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2,707
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Infineon Technologies MOSFET N-CH 60V 120A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 60V 120A (Tc) 4.2 mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V 4520pF @ 50V 10V ±20V
IRFS4115PBF
RFQ
VIEW
RFQ
1,216
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Infineon Technologies MOSFET N-CH 150V 195A D2-PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 150V 195A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V
IRFB4115GPBF
RFQ
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RFQ
2,550
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Infineon Technologies MOSFET N-CH 150V 104A TO220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 150V 104A (Tc) 11 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V
IRFS4410ZPBF
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2,928
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Infineon Technologies MOSFET N-CH 100V 97A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
IRFB4410ZGPBF
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3,480
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Infineon Technologies MOSFET N-CH 100V 97A TO-220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V
IRFB3306GPBF
RFQ
VIEW
RFQ
1,701
In-stock
Infineon Technologies MOSFET N-CH 60V 160A TO-220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 60V 120A (Tc) 4.2 mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V 4520pF @ 50V 10V ±20V