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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF2804S-7PPBF	RFQ VIEW	PDF RFQ	3,950 In-stock	Infineon Technologies	MOSFET N-CH 40V 160A D2PAK-7		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	D2PAK (7-Lead)	330W (Tc)	N-Channel	-	40V	160A (Tc)	1.6 mOhm @ 160A, 10V	4V @ 250µA	260nC @ 10V	6930pF @ 25V	10V	±20V
	IRF1405STRRPBF	RFQ VIEW	PDF RFQ	3,926 In-stock	Infineon Technologies	MOSFET N-CH 55V 131A D2PAK		HEXFET®	Not For New Designs	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	200W (Tc)	N-Channel	-	55V	131A (Tc)	5.3 mOhm @ 101A, 10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	10V	±20V
	IRF1405SPBF	RFQ VIEW	PDF RFQ	676 In-stock	Infineon Technologies	MOSFET N-CH 55V 131A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	200W (Tc)	N-Channel	-	55V	131A (Tc)	5.3 mOhm @ 101A, 10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	10V	±20V
	IRFS3207PBF	RFQ VIEW	PDF RFQ	2,399 In-stock	Infineon Technologies	MOSFET N-CH 75V 170A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	300W (Tc)	N-Channel	-	75V	170A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	260nC @ 10V	7600pF @ 50V	10V	±20V

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