- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,386
In-stock
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,823
In-stock
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,562
In-stock
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,369
In-stock
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ON Semiconductor | MOSFET N-CH 100V 61A TO-263AB | PowerTrench® | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150W (Tc) | N-Channel | - | 100V | 9A (Ta), 61A (Tc) | 16 mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | 2880pF @ 25V | 6V, 10V | ±20V | |||
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|
VIEW |
1,087
In-stock
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ON Semiconductor | MOSFET N-CH 100V 61A TO-263AB | PowerTrench® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150W (Tc) | N-Channel | - | 100V | 9A (Ta), 61A (Tc) | 16 mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | 2880pF @ 25V | 6V, 10V | ±20V | |||
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|
VIEW |
3,866
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 61A TO-263AB | PowerTrench® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150W (Tc) | N-Channel | - | 100V | 9A (Ta), 61A (Tc) | 16 mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | 2880pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
1,884
In-stock
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Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,321
In-stock
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STMicroelectronics | MOSFET N-CH 500V 20A D2PAK | FDmesh™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 192W (Tc) | N-Channel | - | 500V | 20A (Tc) | 250 mOhm @ 10A, 10V | 5V @ 250µA | 53nC @ 10V | 1380pF @ 25V | 10V | ±30V | |||
