- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
823
In-stock
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Infineon Technologies | MOSFET N-CH 600V 53A TO247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 391W (Tc) | N-Channel | - | 600V | 53A (Tc) | 70 mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170nC @ 10V | 3800pF @ 100V | 10V | ±20V | |||
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VIEW |
2,590
In-stock
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Infineon Technologies | MOSFET N-CH 560V 32A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 284W (Tc) | N-Channel | - | 560V | 32A (Tc) | 110 mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,591
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | |||
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VIEW |
1,065
In-stock
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Infineon Technologies | MOSFET N-CH 650V 53.5A TO247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 391W (Tc) | N-Channel | - | 650V | 53.5A (Tc) | 70 mOhm @ 17.6A, 10V | 3.5V @ 1.76mA | 170nC @ 10V | 3900pF @ 100V | 10V | ±20V | |||
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VIEW |
1,217
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | |||
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VIEW |
1,226
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | |||
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VIEW |
3,174
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | |||
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VIEW |
1,145
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | |||
