Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V
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Infineon Technologies MOSFET N-CH 200V 24A D-PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 200V 24A (Tc) 78 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 144W (Tc) N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V