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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,872
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,574
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 6A CPT3 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 6A (Tc) | 530 mOhm @ 3A, 10V | 5V @ 1mA | 15nC @ 10V | 840pF @ 25V | 10V | ±30V | |||
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VIEW |
3,502
In-stock
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Infineon Technologies | MOSFET N-CH 600V 20.7A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 35W (Tc) | N-Channel | - | 600V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
1,976
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
1,235
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 8A (Ta) | 300 mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | 1440pF @ 25V | 10V | ±30V | |||
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VIEW |
3,304
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 8A (Ta) | 300 mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | 1440pF @ 25V | 10V | ±30V | |||
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VIEW |
2,838
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | - | 250V | 8A (Ta) | 300 mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | 1440pF @ 25V | 10V | ±30V | |||
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VIEW |
1,553
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 3.5A TO-247 | POWER MOS 7® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 135W (Tc) | N-Channel | - | 1200V | 3.5A (Tc) | 4.7 Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | 10V | ±30V |