Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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R6012ANJTL
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Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel - 600V 12A (Ta) 420 mOhm @ 6A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
R6012ANX
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1,022
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Rohm Semiconductor MOSFET N-CH 600V 12A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 600V 12A (Ta) 420 mOhm @ 6A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
IRF7855PBF
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2,336
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Infineon Technologies MOSFET N-CH 60V 12A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 60V 12A (Ta) 9.4 mOhm @ 12A, 10V 4.9V @ 100µA 39nC @ 10V 1560pF @ 25V 10V ±20V