- Manufacture :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,402
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,495
In-stock
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ON Semiconductor | MOSFET N-CH 100V 43A TO-3 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 193W (Tc) | N-Channel | - | 100V | 43A (Tc) | 40 mOhm @ 21.5A, 10V | 4V @ 250µA | 97nC @ 10V | 2270pF @ 25V | 10V | - | |||
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VIEW |
748
In-stock
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Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
825
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 71W (Tc) | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | |||
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VIEW |
3,512
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 71W (Tc) | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | |||
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VIEW |
856
In-stock
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Infineon Technologies | MOSFET N-CH 30V 43A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,912
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
