- Manufacture :
- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,943
In-stock
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ON Semiconductor | MOSFET N-CH 500V 9.6A TO-3PF | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | SC-94 | TO-3PF | 96W (Tc) | N-Channel | 500V | 9.6A (Tc) | 390 mOhm @ 4.8A, 10V | 4V @ 250µA | 113nC @ 10V | 3800pF @ 25V | 10V | ±30V | |||
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VIEW |
2,732
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A TO-263 | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 96W (Tc) | N-Channel | 600V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,217
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 96W (Tc) | N-Channel | 650V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,448
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,435
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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|
VIEW |
3,248
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,030
In-stock
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Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
VIEW |
753
In-stock
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Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
