- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,962
In-stock
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Rohm Semiconductor | MOSFET N-CH 10V DRIVE TO-3PF | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | - | 600V | 46A (Ta) | 81 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | 6000pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,518
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 20A TO3PF | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | - | 600V | 20A (Ta) | 220 mOhm @ 10A, 10V | 4.15V @ 1mA | 65nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,954
In-stock
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Infineon Technologies | MOSFET N-CH 75V 62A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 120W (Tc) | N-Channel | - | 75V | 62A (Tc) | 12.6 mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,294
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 46A TO247 | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 120W (Tc) | N-Channel | - | 600V | 46A (Tc) | 90 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | 6000pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,499
In-stock
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ON Semiconductor | MOSFET N-CH 60V 50A TO-220 | QFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 120W (Tc) | N-Channel | - | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | |||
|
VIEW |
903
In-stock
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Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
