Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDP047AN08A0-F102
RFQ
VIEW
RFQ
895
In-stock
ON Semiconductor MOSFET N-CH 75V 80A TO-220AB-3 - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 310W (Tc) N-Channel - 75V - - - - - 6V, 10V ±20V
FDP047AN08A0
RFQ
VIEW
RFQ
1,229
In-stock
ON Semiconductor MOSFET N-CH 75V 80A TO-220AB PowerTrench® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 310W (Tc) N-Channel - 75V 15A (Tc) 4.7 mOhm @ 80A, 10V 4V @ 250µA 138nC @ 10V 6600pF @ 25V 6V, 10V ±20V
FDP3632
RFQ
VIEW
RFQ
1,003
In-stock
ON Semiconductor MOSFET N-CH 100V 80A TO-220AB PowerTrench® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 310W (Tc) N-Channel - 100V 12A (Ta), 80A (Tc) 9 mOhm @ 80A, 10V 4V @ 250µA 110nC @ 10V 6000pF @ 25V 6V, 10V ±20V
IRFP2907ZPBF
RFQ
VIEW
RFQ
2,233
In-stock
Infineon Technologies MOSFET N-CH 75V 90A TO-247AC HEXFET® Not For New Designs Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 75V 90A (Tc) 4.5 mOhm @ 90A, 10V 4V @ 250µA 270nC @ 10V 7500pF @ 25V 10V ±20V