Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RDN150N20FU6
RFQ
VIEW
RFQ
3,663
In-stock
Rohm Semiconductor MOSFET N-CH 200V 15A TO-220FN - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 40W (Tc) N-Channel 200V 15A (Ta) 160 mOhm @ 7.5A, 10V 4V @ 1mA 64nC @ 10V 1224pF @ 10V 10V ±30V
RDN050N20FU6
RFQ
VIEW
RFQ
3,751
In-stock
Rohm Semiconductor MOSFET N-CH 200V 5A TO-220FN - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 30W (Tc) N-Channel 200V 5A (Ta) 720 mOhm @ 2.5A, 10V 4V @ 1mA 18.6nC @ 10V 292pF @ 10V 10V ±30V
RDN100N20FU6
RFQ
VIEW
RFQ
1,283
In-stock
Rohm Semiconductor MOSFET N-CH 200V 10A TO-220FN - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 35W (Tc) N-Channel 200V 10A (Ta) 360 mOhm @ 5A, 10V 4V @ 1mA 30nC @ 10V 543pF @ 10V 10V ±30V