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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,038
In-stock
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Infineon Technologies | MOSFET N-CH 30V 160A DPAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 135W (Tc) | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,627
In-stock
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Infineon Technologies | MOSFET N-CH 30V 160A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 135W (Tc) | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,553
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 3.5A TO-247 | POWER MOS 7® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 135W (Tc) | N-Channel | - | 1200V | 3.5A (Tc) | 4.7 Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | 10V | ±30V |