Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA100N08N3GXKSA1
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2,810
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Infineon Technologies MOSFET N-CH 80V 40A TO220-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 35W (Tc) N-Channel - 80V 40A (Tc) 10 mOhm @ 40A, 10V 3.5V @ 46µA 35nC @ 10V 2410pF @ 40V 6V, 10V ±20V
IPA126N10N3GXKSA1
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RFQ
1,137
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Infineon Technologies MOSFET N-CH 100V 35A TO220-FP OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 100V 35A (Tc) 12.6 mOhm @ 35A, 10V 3.5V @ 45µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
R6012ANX
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RFQ
1,022
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Rohm Semiconductor MOSFET N-CH 600V 12A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 600V 12A (Ta) 420 mOhm @ 6A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
R5013ANXFU6
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RFQ
1,823
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Rohm Semiconductor MOSFET N-CH 500V 13A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 500V 13A (Ta) 380 mOhm @ 6.5A, 10V 4.5V @ 1mA 35nC @ 10V 1300pF @ 25V 10V ±30V
IPP60R250CPXKSA1
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RFQ
1,455
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Infineon Technologies MOSFET N-CH 650V 12A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 104W (Tc) N-Channel - 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 10V ±20V