- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,357
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,009
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,311
In-stock
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Infineon Technologies | MOSFET N-CH 650V 47A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 415W (Tc) | N-Channel | 650V | 47A (Tc) | 70 mOhm @ 30A, 10V | 3.9V @ 2.7mA | 320nC @ 10V | 6800pF @ 25V | 10V | ±20V | |||
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VIEW |
3,125
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 47A TO247AC | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 357W (Tc) | N-Channel | 600V | 47A (Tc) | 64 mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | 9620pF @ 100V | 10V | ±30V |