Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI47N10SL26AKSA1
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2,357
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Infineon Technologies MOSFET N-CH 100V 47A TO262-3 SIPMOS® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 175W (Tc) N-Channel 100V 47A (Tc) 26 mOhm @ 33A, 10V 2V @ 2mA 135nC @ 10V 2500pF @ 25V 4.5V, 10V ±20V
IPI47N10S33AKSA1
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3,009
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Infineon Technologies MOSFET N-CH 100V 47A TO262-3 SIPMOS® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 175W (Tc) N-Channel 100V 47A (Tc) 33 mOhm @ 33A, 10V 4V @ 2mA 105nC @ 10V 2500pF @ 25V 10V ±20V
SPW47N60C3FKSA1
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RFQ
3,311
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Infineon Technologies MOSFET N-CH 650V 47A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 415W (Tc) N-Channel 650V 47A (Tc) 70 mOhm @ 30A, 10V 3.9V @ 2.7mA 320nC @ 10V 6800pF @ 25V 10V ±20V
SIHG47N60E-E3
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3,125
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Vishay Siliconix MOSFET N-CH 600V 47A TO247AC - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 357W (Tc) N-Channel 600V 47A (Tc) 64 mOhm @ 24A, 10V 4V @ 250µA 220nC @ 10V 9620pF @ 100V 10V ±30V