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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,295
In-stock
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Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
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VIEW |
1,500
In-stock
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Infineon Technologies | MOSFET N-CH 600V 9A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 31W (Tc) | N-Channel | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | |||
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VIEW |
3,572
In-stock
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Infineon Technologies | MOSFET N-CH 650V 9A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 83W (Tc) | N-Channel | 650V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | |||
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VIEW |
3,668
In-stock
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Rohm Semiconductor | MOSFET N-CH 500V 9A TO220 | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 500V | 9A (Tc) | 720 mOhm @ 4.5A, 10V | 4.5V @ 1mA | 21nC @ 10V | 650pF @ 25V | 10V | ±30V |