Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,943
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ON Semiconductor MOSFET N-CH 500V 9.6A TO-3PF - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 96W (Tc) N-Channel 500V 9.6A (Tc) 390 mOhm @ 4.8A, 10V 4V @ 250µA 113nC @ 10V 3800pF @ 25V 10V ±30V
IPP60R299CPXKSA1
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3,217
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Infineon Technologies MOSFET N-CH 650V 11A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 96W (Tc) N-Channel 650V 11A (Tc) 299 mOhm @ 6.6A, 10V 3.5V @ 440µA 29nC @ 10V 1100pF @ 100V 10V ±20V
TPH3206PD
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2,030
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Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3206PS
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753
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Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V