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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,733
In-stock
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Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | P-Channel | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,179
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 100A D2PAK | - | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | 30V | 100A (Tc) | 7 mOhm @ 60A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | 4V, 10V | ±20V | |||
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VIEW |
1,881
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 100A D2PAK | - | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | 30V | 100A (Tc) | 7 mOhm @ 60A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | 4V, 10V | ±20V | |||
