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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
746
In-stock
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EPC | TRANS GAN 80V 6.8A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 6.8A (Ta) | 22 mOhm @ 6A, 5V | 2.5V @ 2mA | 2nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
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VIEW |
1,301
In-stock
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EPC | TRANS GAN 80V 6.8A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 6.8A (Ta) | 22 mOhm @ 6A, 5V | 2.5V @ 2mA | 2nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
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VIEW |
1,302
In-stock
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EPC | TRANS GAN 80V 6.8A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 80V | 6.8A (Ta) | 22 mOhm @ 6A, 5V | 2.5V @ 2mA | 2nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
