Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQD5P20TM
RFQ
VIEW
RFQ
3,331
In-stock
ON Semiconductor MOSFET P-CH 200V 3.7A DPAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 45W (Tc) P-Channel - 200V 3.7A (Tc) 1.4 Ohm @ 1.85A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
IRLM220ATF
RFQ
VIEW
RFQ
1,182
In-stock
ON Semiconductor MOSFET N-CH 200V 1.13A SOT-223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 200V 1.13A (Ta) 800 mOhm @ 570mA, 5V - 15nC @ 5V 430pF @ 25V 5V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
683
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6906XTSA1
RFQ
VIEW
RFQ
3,355
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V