- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,904
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
2,842
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 1A VML1006 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 (VML1006) | 400mW (Ta) | N-Channel | 20V | 1A (Ta) | 470 mOhm @ 500mA, 4.5V | 1V @ 1mA | - | 40pF @ 10V | 1.2V, 4.5V | ±8V |