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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,484
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,804
In-stock
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Exar Corporation | MOSFET N-CH 600V 1.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 20W (Tc) | N-Channel | 600V | 1.5A (Tc) | 8 Ohm @ 750mA, 10V | 4V @ 250µA | 7.5nC @ 10V | 170pF @ 25V | 10V | ±30V |