- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,746
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 0.1A CST3 | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | N-Channel | - | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
1,289
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 0.1A SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | - | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
3,154
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
VIEW |
2,824
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 500MA SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 1.5V, 5V | ±10V | |||
|
VIEW |
1,601
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.25A VESM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
1,149
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 0.1A SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 100mW (Ta) | N-Channel | - | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
1,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
|
VIEW |
1,849
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
2,429
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 0.1A U-MOS III | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
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|
VIEW |
1,040
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.33A SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | P-Channel | - | 20V | 330mA (Ta) | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
1,201
In-stock
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Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
VIEW |
809
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 3.5A 2-3Z1A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3.5A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
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|
VIEW |
1,023
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 250MA SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
VIEW |
601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
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|
VIEW |
3,766
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 500MA VESM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 1.5V, 5V | ±10V | |||
