- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,576
In-stock
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Diodes Incorporated | MOSFET NCH 20V 2.8A SOT23 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 660mW (Ta) | N-Channel | - | 20V | 2.8A (Ta) | 90 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 2.8nC @ 10V | 130pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,405
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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VIEW |
2,628
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A 6UDFN | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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2,555
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A CST3B | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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VIEW |
1,682
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A SOT-23F | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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3,883
In-stock
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ON Semiconductor | MOSFET N-CH 30V 2A MCPH3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-MCPH | 800mW (Ta) | N-Channel | - | 30V | 2A (Ta) | 165 mOhm @ 1A, 4.5V | - | 1.7nC @ 4.5V | 130pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,389
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 2.8A SOT23 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 660mW (Ta) | N-Channel | - | 20V | 2.8A (Ta) | 90 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 2.8nC @ 10V | 130pF @ 10V | 2.5V, 4.5V | ±12V |