Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Renesas Electronics America MOSFET N-CH 20V 7A 6SON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-PowerWDFN 6-HUSON (2x2) 2.4W (Ta) N-Channel - 20V 7A (Ta) 19.1 mOhm @ 3.5A, 2.5V - 7.9nC @ 10V 870pF @ 10V 2.5V, 4.5V ±12V
SSM6J771G,LF
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A 6WCSP U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP - 1.2W (Ta) P-Channel - 20V 5A (Ta) 31 mOhm @ 3A, 8.5V 1.2V @ 1mA, 3V 9.8nC @ 4.5V 870pF @ 10V 2.5V, 8.5V ±12V
SSM6J771G,LF
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A 6WCSP U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP - 1.2W (Ta) P-Channel - 20V 5A (Ta) 31 mOhm @ 3A, 8.5V 1.2V @ 1mA, 3V 9.8nC @ 4.5V 870pF @ 10V 2.5V, 8.5V ±12V
SSM6J771G,LF
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3,460
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A 6WCSP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP - 1.2W (Ta) P-Channel - 20V 5A (Ta) 31 mOhm @ 3A, 8.5V 1.2V @ 1mA, 3V 9.8nC @ 4.5V 870pF @ 10V 2.5V, 8.5V ±12V