Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2314EDS-T1-GE3
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Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V
SI2314EDS-T1-E3
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2,280
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Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V
SI2314EDS-T1-E3
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1,946
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Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V
SI2314EDS-T1-E3
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3,853
In-stock
Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V