Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSVII Active - MOSFET (Metal Oxide) 150°C Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 1.9W (Ta), 30W (Tc) N-Channel - 20V 21A (Ta) 5.8 mOhm @ 10.5A, 4.5V 1.2V @ 500µA 16nC @ 5V 1860pF @ 10V 2.5V, 4.5V ±12V
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Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.6 mOhm @ 20A, 10V 2.35V @ 250µA 60nC @ 4.5V 6240pF @ 15V 4.5V, 10V ±12V
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Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.6 mOhm @ 20A, 10V 2.35V @ 250µA 60nC @ 4.5V 6240pF @ 15V 4.5V, 10V ±12V
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Infineon Technologies MOSFET N-CH 30V 21A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.6 mOhm @ 20A, 10V 2.35V @ 250µA 60nC @ 4.5V 6240pF @ 15V 4.5V, 10V ±12V