- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
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- Power Dissipation (Max) :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,453
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
|
VIEW |
2,534
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
|
VIEW |
3,405
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
|
VIEW |
1,507
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.8A 6MICROFET | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 1.4W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.8A (Ta) | 299 mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 75pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,418
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.8A 6MICROFET | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 1.4W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.8A (Ta) | 299 mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 75pF @ 15V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,917
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.8A 6MICROFET | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 1.4W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.8A (Ta) | 299 mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 75pF @ 15V | 2.5V, 4.5V | ±12V |