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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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22 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,869
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 1.5A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.5A (Ta) | 240 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | 80pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,589
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 1.44A SC89-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 330mW (Ta) | P-Channel | - | 30V | 1.44A (Ta) | 100 mOhm @ 1.4A, 4.5V | 1.5V @ 250µA | 26nC @ 10V | 750pF @ 15V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,757
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 1A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | Schottky Diode (Body) | 20V | 1A (Ta) | 390 mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,590
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.02A SOT563F | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | - | 240mW (Tc) | N-Channel | - | 30V | 1.02A (Tc) | 142 mOhm @ 1A, 10V | 1.5V @ 250µA | 3nC @ 4.5V | 110pF @ 15V | 2.5V, 10V | ±12V | |||
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|
VIEW |
1,423
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.02A SOT563F | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | - | 240mW (Tc) | N-Channel | - | 30V | 1.02A (Tc) | 142 mOhm @ 1A, 10V | 1.5V @ 250µA | 3nC @ 4.5V | 110pF @ 15V | 2.5V, 10V | ±12V | |||
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|
VIEW |
2,466
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.02A SOT563F | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | - | 240mW (Tc) | N-Channel | - | 30V | 1.02A (Tc) | 142 mOhm @ 1A, 10V | 1.5V @ 250µA | 3nC @ 4.5V | 110pF @ 15V | 2.5V, 10V | ±12V | |||
|
VIEW |
1,453
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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|
VIEW |
2,534
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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|
VIEW |
3,405
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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|
VIEW |
3,567
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.2A SOT563F | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | - | 30V | - | 99 mOhm @ 1.2A, 4.5V | 1.55V @ 250µA | 8.3nC @ 5V | 385pF @ 15V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,833
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.2A SOT563F | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | - | 30V | - | 99 mOhm @ 1.2A, 4.5V | 1.55V @ 250µA | 8.3nC @ 5V | 385pF @ 15V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
1,322
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 1.2A SOT563F | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | - | 30V | - | 99 mOhm @ 1.2A, 4.5V | 1.55V @ 250µA | 8.3nC @ 5V | 385pF @ 15V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,733
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 2.1A SOT563 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | 850mW (Ta) | P-Channel | - | 20V | 2.1A (Ta) | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
3,164
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 2.1A SOT563 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | 850mW (Ta) | P-Channel | - | 20V | 2.1A (Ta) | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
2,906
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 0.86A SOT-563 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | 850mW (Ta) | P-Channel | - | 20V | 860mA (Ta) | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 1.8V, 4.5V | ±12V | |||
|
VIEW |
981
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
2,197
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
3,929
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
3,504
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 2.1A SOT563 | Automotive, AEC-Q101 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | 850mW (Ta) | P-Channel | - | 20V | 2.1A (Ta) | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
2,882
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 50 mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | 560pF @ 15V | 1.8V, 10V | ±12V | |||
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|
VIEW |
3,165
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 50 mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | 560pF @ 15V | 1.8V, 10V | ±12V | |||
|
|
VIEW |
1,984
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 50 mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | 560pF @ 15V | 1.8V, 10V | ±12V | |||
