- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,103
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 60A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 68W (Tc) | P-Channel | - | 12V | 60A (Tc) | 5.8 mOhm @ 15A, 4.5V | 1.5V @ 250µA | 150nC @ 4.5V | 9100pF @ 6V | 2.5V, 4.5V | ±8V | |||
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VIEW |
676
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,777
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 60A POWERPAK1212 | TrenchFET® Gen III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 52W (Tc) | P-Channel | - | 30V | 60A (Tc) | 8.55 mOhm @ 15A, 4.5V | 1.6V @ 250µA | 46nC @ 2.5V | 5860pF @ 15V | 2.5V, 4.5V | ±12V |