Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMN313DLT-7
RFQ
VIEW
RFQ
1,084
In-stock
Diodes Incorporated MOSFET N-CH 30V 0.27A SOT523 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-523 SOT-523 280mW (Ta) N-Channel - 30V 270mA (Ta) 2 Ohm @ 10mA, 4V 1.5V @ 250µA 0.5nC @ 4.5V 36.3pF @ 5V 2.5V, 4.5V ±20V
DMN313DLT-7
RFQ
VIEW
RFQ
3,193
In-stock
Diodes Incorporated MOSFET N-CH 30V 0.27A SOT523 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-523 SOT-523 280mW (Ta) N-Channel - 30V 270mA (Ta) 2 Ohm @ 10mA, 4V 1.5V @ 250µA 0.5nC @ 4.5V 36.3pF @ 5V 2.5V, 4.5V ±20V
DMN313DLT-7
RFQ
VIEW
RFQ
1,865
In-stock
Diodes Incorporated MOSFET N-CH 30V 0.27A SOT523 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-523 SOT-523 280mW (Ta) N-Channel - 30V 270mA (Ta) 2 Ohm @ 10mA, 4V 1.5V @ 250µA 0.5nC @ 4.5V 36.3pF @ 5V 2.5V, 4.5V ±20V
IRF5806TRPBF
RFQ
VIEW
RFQ
2,821
In-stock
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
IRF5806TRPBF
RFQ
VIEW
RFQ
1,946
In-stock
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
IRF5806TRPBF
RFQ
VIEW
RFQ
3,236
In-stock
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V