Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CSD25213W10
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Texas Instruments MOSFET P-CH 20V 1.6A 4DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, DSBGA 4-DSBGA (1x1) 1W (Ta) P-Channel - 20V 1.6A (Ta) 47 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 478pF @ 10V 2.5V, 4.5V -6V
CSD25213W10
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Texas Instruments MOSFET P-CH 20V 1.6A 4DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, DSBGA 4-DSBGA (1x1) 1W (Ta) P-Channel - 20V 1.6A (Ta) 47 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 478pF @ 10V 2.5V, 4.5V -6V
CSD25213W10
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2,084
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Texas Instruments MOSFET P-CH 20V 1.6A 4DSBGA NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, DSBGA 4-DSBGA (1x1) 1W (Ta) P-Channel - 20V 1.6A (Ta) 47 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 478pF @ 10V 2.5V, 4.5V -6V
IRLML2246TRPBF
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743
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Infineon Technologies MOSFET P-CH 20V 2.6A SOT23 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) P-Channel - 20V 2.6A (Ta) 135 mOhm @ 2.6A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 220pF @ 16V 2.5V, 4.5V ±12V
IRLML2246TRPBF
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1,516
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Infineon Technologies MOSFET P-CH 20V 2.6A SOT23 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) P-Channel - 20V 2.6A (Ta) 135 mOhm @ 2.6A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 220pF @ 16V 2.5V, 4.5V ±12V
IRLML2246TRPBF
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3,562
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Infineon Technologies MOSFET P-CH 20V 2.6A SOT23 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) P-Channel - 20V 2.6A (Ta) 135 mOhm @ 2.6A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 220pF @ 16V 2.5V, 4.5V ±12V
IRLML6346TRPBF
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793
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Infineon Technologies MOSFET N-CH 30V 3.4A SOT23 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) N-Channel - 30V 3.4A (Ta) 63 mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 270pF @ 24V 2.5V, 4.5V ±12V
IRLML6346TRPBF
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2,689
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Infineon Technologies MOSFET N-CH 30V 3.4A SOT23 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) N-Channel - 30V 3.4A (Ta) 63 mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 270pF @ 24V 2.5V, 4.5V ±12V
IRLML6346TRPBF
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1,766
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Infineon Technologies MOSFET N-CH 30V 3.4A SOT23 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.3W (Ta) N-Channel - 30V 3.4A (Ta) 63 mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.9nC @ 4.5V 270pF @ 24V 2.5V, 4.5V ±12V