Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC6012(TE85L,F,M)
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 6A VS6 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel - 20V 6A (Ta) 20 mOhm @ 3A, 4.5V 1.2V @ 200µA 9nC @ 5V 630pF @ 10V 2.5V, 4.5V ±12V
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Rohm Semiconductor MOSFET N-CH 30V 1.5A WEMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 700mW (Ta) N-Channel Schottky Diode (Isolated) 30V 1.5A (Ta) 240 mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.2nC @ 4.5V 80pF @ 10V 2.5V, 4.5V ±12V
DMN1008UFDF-7
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Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V
ES6U42T2R
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2,757
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Rohm Semiconductor MOSFET P-CH 20V 1A WEMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 700mW (Ta) P-Channel Schottky Diode (Body) 20V 1A (Ta) 390 mOhm @ 1A, 4.5V 2V @ 1mA 2.1nC @ 4.5V 150pF @ 10V 2.5V, 4.5V ±12V
TSM2301ACX RFG
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2,134
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 2.8A SOT23 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel - 20V 2.8A (Tc) 130 mOhm @ 2.8A, 4.5V 1V @ 250µA 4.5nC @ 4.5V 480pF @ 15V 2.5V, 4.5V ±12V
TSM2301ACX RFG
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2,607
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 2.8A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel - 20V 2.8A (Tc) 130 mOhm @ 2.8A, 4.5V 1V @ 250µA 4.5nC @ 4.5V 480pF @ 15V 2.5V, 4.5V ±12V
TSM2301ACX RFG
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3,315
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 2.8A SOT23 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 700mW (Ta) P-Channel - 20V 2.8A (Tc) 130 mOhm @ 2.8A, 4.5V 1V @ 250µA 4.5nC @ 4.5V 480pF @ 15V 2.5V, 4.5V ±12V
TPC6113(TE85L,F,M)
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2,409
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A VS6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel - 20V 5A (Ta) 55 mOhm @ 2.5A, 4.5V 1.2V @ 200µA 10nC @ 5V 690pF @ 10V 2.5V, 4.5V ±12V
DMN1008UFDF-13
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Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V
DMN1008UFDF-13
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1,679
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Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V
DMN1008UFDF-13
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2,427
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Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
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1,752
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
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3,591
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
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3,029
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
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1,994
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
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3,005
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Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V