- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,360
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 6A VS6 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 20V | 6A (Ta) | 20 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,641
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 10A | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | N-Channel | - | 20V | 10A (Ta) | 12 mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4nC @ 4.5V | 710pF @ 10V | 2.5V, 4.5V | ±12V | |||
