- Series :
- Operating Temperature :
- Mounting Type :
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26 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,190
In-stock
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Renesas Electronics America | MOSFET N-CH 200V 40A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 200V | 40A (Ta) | 36 mOhm @ 20A, 10V | - | 72nC @ 10V | 2900pF @ 25V | 10V | ±30V | ||||
VIEW |
1,315
In-stock
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IXYS | MOSFET N-CH 1000V 9A ISOPLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 250W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.2 Ohm @ 5A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
792
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,382
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,839
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,422
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,310
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,653
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,344
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
2,224
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,230
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,375
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,288
In-stock
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IXYS | MOSFET N-CH 1000V 10A ISOPLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 250W (Tc) | N-Channel | - | 1000V | 10A (Tc) | 1.1 Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,081
In-stock
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IXYS | MOSFET N-CH 900V 12A PLUS247 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 300W (Tc) | N-Channel | - | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,292
In-stock
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IXYS | MOSFET N-CH 900V 12A TO-268 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 300W (Tc) | N-Channel | - | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
963
In-stock
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IXYS | MOSFET N-CH 1000V 12A TO-247AD | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 1000V | 12A (Tc) | 1.05 Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
760
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,946
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,213
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
2,313
In-stock
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Infineon Technologies | MOSFET N-CH 55V 49A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 58W (Tc) | N-Channel | - | 55V | 49A (Tc) | 12 mOhm @ 26A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
1,367
In-stock
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Infineon Technologies | MOSFET N-CH 55V 81A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 170W (Tc) | N-Channel | - | 55V | 81A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
3,975
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
624
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 357W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V | ||||
VIEW |
3,404
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A D2PAK | UniFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 357W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V | ||||
VIEW |
2,395
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A D2PAK | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 357W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V | ||||
VIEW |
1,056
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A D2PAK | UniFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 357W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V |