Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
R6009ENX
RFQ
VIEW
RFQ
3,145
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A TO220 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 40W (Tc) N-Channel - 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 4V @ 1mA 23nC @ 10V 430pF @ 25V 10V ±20V
IRLM220ATF
RFQ
VIEW
RFQ
1,182
In-stock
ON Semiconductor MOSFET N-CH 200V 1.13A SOT-223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 200V 1.13A (Ta) 800 mOhm @ 570mA, 5V - 15nC @ 5V 430pF @ 25V 5V ±20V
IRLM220ATF
RFQ
VIEW
RFQ
2,225
In-stock
ON Semiconductor MOSFET N-CH 200V 1.13A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 200V 1.13A (Ta) 800 mOhm @ 570mA, 5V - 15nC @ 5V 430pF @ 25V 5V ±20V
IRLM220ATF
RFQ
VIEW
RFQ
1,097
In-stock
ON Semiconductor MOSFET N-CH 200V 1.13A SOT-223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 200V 1.13A (Ta) 800 mOhm @ 570mA, 5V - 15nC @ 5V 430pF @ 25V 5V ±20V
R6009ENJTL
RFQ
VIEW
RFQ
722
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A LPT - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 4V @ 1mA 23nC @ 10V 430pF @ 25V 10V ±20V
R6009ENJTL
RFQ
VIEW
RFQ
2,352
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A LPT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 4V @ 1mA 23nC @ 10V 430pF @ 25V 10V ±20V
R6009ENJTL
RFQ
VIEW
RFQ
3,931
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A LPT - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 4V @ 1mA 23nC @ 10V 430pF @ 25V 10V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
683
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
771
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
2,874
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6906XTSA1
RFQ
VIEW
RFQ
3,355
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6906XTSA1
RFQ
VIEW
RFQ
2,697
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6906XTSA1
RFQ
VIEW
RFQ
2,831
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V