Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMC3612
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1,886
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ON Semiconductor MOSFET N-CH 100V 8-MLP PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 35W (Tc) N-Channel - 100V 3.3A (Ta), 16A (Tc) 110 mOhm @ 3.3A, 10V 4V @ 250µA 21nC @ 10V 880pF @ 50V 6V, 10V ±20V
FDMC3612
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RFQ
1,583
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ON Semiconductor MOSFET N-CH 100V 8-MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 35W (Tc) N-Channel - 100V 3.3A (Ta), 16A (Tc) 110 mOhm @ 3.3A, 10V 4V @ 250µA 21nC @ 10V 880pF @ 50V 6V, 10V ±20V
FDMC3612
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RFQ
3,467
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ON Semiconductor MOSFET N-CH 100V 8-MLP PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.3W (Ta), 35W (Tc) N-Channel - 100V 3.3A (Ta), 16A (Tc) 110 mOhm @ 3.3A, 10V 4V @ 250µA 21nC @ 10V 880pF @ 50V 6V, 10V ±20V
STF6N65K3
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RFQ
1,427
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STMicroelectronics MOSFET N-CH 650V 5.4A SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 5.4A (Tc) 1.3 Ohm @ 2.8A, 10V 4.5V @ 50µA 35nC @ 10V 880pF @ 50V 10V ±30V
STU6N65K3
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RFQ
3,016
In-stock
STMicroelectronics MOSFET N-CH 650V 5.4A IPAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 110W (Tc) N-Channel - 650V 5.4A (Tc) 1.3 Ohm @ 2.7A, 10V 4.5V @ 50µA 33nC @ 10V 880pF @ 50V 10V ±30V
TPN3300ANH,LQ
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RFQ
2,511
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
TPN3300ANH,LQ
RFQ
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RFQ
3,337
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
TPN3300ANH,LQ
RFQ
VIEW
RFQ
3,391
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V