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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF630L	RFQ VIEW	PDF RFQ	2,231 In-stock	Vishay Siliconix	MOSFET N-CH 200V 9A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	-	200V	9A (Tc)	400 mOhm @ 5.4A, 10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	10V	±20V
	IXTP8N65X2M	RFQ VIEW	PDF RFQ	2,193 In-stock	IXYS	MOSFET N-CH 650V 4A X2 TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	32W (Tc)	N-Channel	-	650V	4A (Tc)	550 mOhm @ 4A, 10V	5V @ 250µA	12nC @ 10V	800pF @ 25V	10V	±30V
	TK8A55DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,028 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	550V	7.5A (Ta)	1.07 Ohm @ 3.8A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	TK9A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,982 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 9A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	450V	9A (Ta)	770 mOhm @ 4.5A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	STP19NF20	RFQ VIEW	PDF RFQ	2,281 In-stock	STMicroelectronics	MOSFET N-CH 200V 15A TO-220		MESH OVERLAY™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	90W (Tc)	N-Channel	-	200V	15A (Tc)	160 mOhm @ 7.5A, 10V	4V @ 250µA	24nC @ 10V	800pF @ 25V	10V	±20V
	STF19NF20	RFQ VIEW	PDF RFQ	3,128 In-stock	STMicroelectronics	MOSFET N-CH 200V 15A TO-220FP		MESH OVERLAY™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	25W (Tc)	N-Channel	-	200V	15A (Tc)	160 mOhm @ 7.5A, 10V	4V @ 250µA	24nC @ 10V	800pF @ 25V	10V	±20V
	IRFI630GPBF	RFQ VIEW	PDF RFQ	3,756 In-stock	Vishay Siliconix	MOSFET N-CH 200V 5.9A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	35W (Tc)	N-Channel	-	200V	5.9A (Tc)	400 mOhm @ 3.5A, 10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	10V	±20V
	TK5A65D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,016 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	650V	5A (Ta)	1.43 Ohm @ 2.5A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	IXTP8N65X2	RFQ VIEW	PDF RFQ	1,574 In-stock	IXYS	MOSFET N-CH 650V 8A X2 TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	150W (Tc)	N-Channel	-	650V	8A (Tc)	500 mOhm @ 4A, 10V	5V @ 250µA	12nC @ 10V	800pF @ 25V	10V	±30V
	TK8A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,957 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 8A TO220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	500V	8A (Ta)	850 mOhm @ 4A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	FQP12P10	RFQ VIEW	PDF RFQ	2,633 In-stock	ON Semiconductor	MOSFET P-CH 100V 11.5A TO-220		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	75W (Tc)	P-Channel	-	100V	11.5A (Tc)	290 mOhm @ 5.75A, 10V	4V @ 250µA	27nC @ 10V	800pF @ 25V	10V	±30V
	IRF630PBF	RFQ VIEW	PDF RFQ	3,709 In-stock	Vishay Siliconix	MOSFET N-CH 200V 9A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	-	200V	9A (Tc)	400 mOhm @ 5.4A, 10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	10V	±20V
	IRL530NPBF	RFQ VIEW	PDF RFQ	2,638 In-stock	Infineon Technologies	MOSFET N-CH 100V 17A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	79W (Tc)	N-Channel	-	100V	17A (Tc)	100 mOhm @ 9A, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	4V, 10V	±16V
	IRLU3410PBF	RFQ VIEW	PDF RFQ	3,585 In-stock	Infineon Technologies	MOSFET N-CH 100V 17A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	79W (Tc)	N-Channel	-	100V	17A (Tc)	105 mOhm @ 10A, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	4V, 10V	±16V
	TK6A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	662 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 6A TO220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	600V	6A (Ta)	1.25 Ohm @ 3A, 10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	10V	±30V
	IRLI530NPBF	RFQ VIEW	PDF RFQ	1,457 In-stock	Infineon Technologies	MOSFET N-CH 100V 12A TO220FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	41W (Tc)	N-Channel	-	100V	12A (Tc)	100 mOhm @ 9A, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	4V, 10V	±16V

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