Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP19NF20
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2,281
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STMicroelectronics MOSFET N-CH 200V 15A TO-220 MESH OVERLAY™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 90W (Tc) N-Channel - 200V 15A (Tc) 160 mOhm @ 7.5A, 10V 4V @ 250µA 24nC @ 10V 800pF @ 25V 10V ±20V
FQP12P10
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RFQ
2,633
In-stock
ON Semiconductor MOSFET P-CH 100V 11.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 100V 11.5A (Tc) 290 mOhm @ 5.75A, 10V 4V @ 250µA 27nC @ 10V 800pF @ 25V 10V ±30V
IRF630PBF
RFQ
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RFQ
3,709
In-stock
Vishay Siliconix MOSFET N-CH 200V 9A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 74W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 5.4A, 10V 4V @ 250µA 43nC @ 10V 800pF @ 25V 10V ±20V
IRL530NPBF
RFQ
VIEW
RFQ
2,638
In-stock
Infineon Technologies MOSFET N-CH 100V 17A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V