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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,840
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 450V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 650V | 7A (Ta) | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
3,504
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 11A (Ta) | 600 mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
670
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 9A (Ta) | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
713
In-stock
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Renesas Electronics America | MOSFET N-CH WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | 200V | 17A (Ta) | 94 mOhm @ 8.5A, 10V | - | 26nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
3,221
In-stock
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Renesas Electronics America | MOSFET N-CH 150V WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | 150V | 25A (Ta) | 58 mOhm @ 12.5A, 10V | - | 19nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
2,444
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
1,869
In-stock
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Renesas Electronics America | MOSFET N-CH 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | 200V | 20A (Ta) | 85 mOhm @ 10A, 10V | - | 19nC @ 10V | 1200pF @ 25V | 10V | ±30V |