Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,393
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Renesas Electronics America MOSFET N-CH 30V 30A WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-WFDFN Exposed Pad 8-WPAK 30W (Tc) N-Channel - 30V 30A (Ta) 6.5 mOhm @ 15A, 10V - 10.4nC @ 4.5V 1890pF @ 10V 4.5V, 10V ±20V
RJK03M5DNS-00#J5
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2,887
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Renesas Electronics America MOSFET N-CH 30V 25A HWSON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-HWSON (3.3x3.3) 15W (Tc) N-Channel - 30V 25A (Ta) 6.3 mOhm @ 12.5A, 10V - 10.4nC @ 4.5V 1890pF @ 10V 4.5V, 10V ±20V
SSM6J215FE(TE85L,F
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RFQ
1,616
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM6J215FE(TE85L,F
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RFQ
3,305
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM6J215FE(TE85L,F
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RFQ
1,287
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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RFQ
1,974
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Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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RFQ
3,375
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Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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RFQ
3,662
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V