Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9610L
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2,435
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Vishay Siliconix MOSFET P-CH 200V 1.8A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
IRFZ14L
RFQ
VIEW
RFQ
3,594
In-stock
Vishay Siliconix MOSFET N-CH 60V 10A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.7W (Ta), 43W (Tc) N-Channel 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IRFZ10PBF
RFQ
VIEW
RFQ
1,616
In-stock
Vishay Siliconix MOSFET N-CH 60V 10A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 43W (Tc) N-Channel 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IPA80R1K2P7XKSA1
RFQ
VIEW
RFQ
696
In-stock
Infineon Technologies MOSFET N-CH 800V 4.5A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 25W (Tc) N-Channel 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
PHP20N06T,127
RFQ
VIEW
RFQ
1,889
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 20.3A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 62W (Tc) N-Channel 55V 20.3A (Tc) 75 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 483pF @ 25V 10V ±20V
IRFD014PBF
RFQ
VIEW
RFQ
1,349
In-stock
Vishay Siliconix MOSFET N-CH 60V 1.7A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 1.7A (Ta) 200 mOhm @ 1A, 10V 4V @ 250µA 11nC @ 10V 310pF @ 25V 10V ±20V
IRFD9010
RFQ
VIEW
RFQ
897
In-stock
Vishay Siliconix MOSFET P-CH 50V 1.1A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Tc) P-Channel 50V 1.1A (Tc) 500 mOhm @ 580mA, 10V 4V @ 250µA 11nC @ 10V 240pF @ 25V 10V ±20V
IRFR014PBF
RFQ
VIEW
RFQ
747
In-stock
Vishay Siliconix MOSFET N-CH 60V 7.7A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IPU80R1K2P7AKMA1
RFQ
VIEW
RFQ
1,942
In-stock
Infineon Technologies MOSFET N-CH 800V 4.5A TO251-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 37W (Tc) N-Channel 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
IRFZ14SPBF
RFQ
VIEW
RFQ
892
In-stock
Vishay Siliconix MOSFET N-CH 60V 10A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 43W (Tc) N-Channel 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IRFU014PBF
RFQ
VIEW
RFQ
1,758
In-stock
Vishay Siliconix MOSFET N-CH 60V 7.7A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 25W (Tc) N-Channel 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IRFD9010PBF
RFQ
VIEW
RFQ
1,100
In-stock
Vishay Siliconix MOSFET P-CH 50V 1.1A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Tc) P-Channel 50V 1.1A (Tc) 500 mOhm @ 580mA, 10V 4V @ 250µA 11nC @ 10V 240pF @ 25V 10V ±20V
IRFZ14PBF
RFQ
VIEW
RFQ
1,671
In-stock
Vishay Siliconix MOSFET N-CH 60V 10A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 43W (Tc) N-Channel 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IPW60R190P6FKSA1
RFQ
VIEW
RFQ
2,615
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Infineon Technologies MOSFET N-CH 600V 20.2A TO247 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 151W (Tc) N-Channel 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 11nC @ 10V 1750pF @ 100V 10V ±20V
IRF9610SPBF
RFQ
VIEW
RFQ
3,537
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3W (Ta), 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
IRFIZ14GPBF
RFQ
VIEW
RFQ
1,975
In-stock
Vishay Siliconix MOSFET N-CH 60V 8A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) N-Channel 60V 8A (Tc) 200 mOhm @ 4.8A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V
IPP60R190P6XKSA1
RFQ
VIEW
RFQ
2,949
In-stock
Infineon Technologies MOSFET N-CH 600V 20.2A TO220 CoolMOS™ P6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 151W (Tc) N-Channel 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 11nC @ 10V 1750pF @ 100V 10V ±20V
IRF9610PBF
RFQ
VIEW
RFQ
1,885
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V